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Effects of multiple quantum well (MQW) position and p-type background doping in InGaAs / GaAsP MQW solar cells have been investigated using a semiconductor device simulator, APSYS, focusing on short circuit current Isc. With a high p-type background doping, degradation of Isc as MQW approaches p-region occurs due to recombination in the p-region. Carriers generated in the n-region are found out to be less sensitive to background doping than those in the p-region. Background doping also has indesired influences on carrier escape from wells, a critical issue for design of quantum well solar cells.