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Fabrication of Cu2ZnSnS4 thin film solar cell using chemical method

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6 Author(s)
Dhakal, T. ; Center for Autonomous Solar Power (CASP), State Univ. of New York - Binghamton, Binghamton, NY, USA ; Hamasha, M. ; Sunkari, S. ; Ganta, L.
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We report the growth, characterization and fabrication of the quaternary compound semiconductor Cu2ZnSnS4 (CZTS) thin film solar cell using low temperature chemical synthesis. The constituent materials required for this p-type absorber are earth abundant and available at low cost. In addition, CZTS has large absorption coefficient in the order of 104 cm-1 and has optimum band-gap energy of about 1.5 eV required for an efficient photo-energy conversion. We have adopted a low temperature chemical route followed by spin coating to synthesize CZT layers. Essentially, a metal compound solution of CZT is formed by dissolving Copper (II) acetate, zinc (II) acetate and tin (II) chloride in 2-methoxyethanol and monoethanolamine. The CZT layer, which is formed by spin coating and annealing at around 300°C, is then sulphurized by using a safe organic sulphur source called di-tert-butyl-disulfide (TBDS) for a controlled sulphur transfer at temperature around 400°C to form stoichiometric Cu2ZnSnS4. The Cu to Zn+Sn and Zn to Sn ratios for an optimally synthesized film were 0.87 and 1.2 respectively. Techniques like EDX, XRD and XPS were used for composition, crystallinity and phase analysis.

Published in:

Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE

Date of Conference:

19-24 June 2011