By Topic

Wafer-scale silicon antireflection by realizing tapered silicon nanowires with simple wet etching

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Yung-Jr Hung ; Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei, Taiwan ; Kai-Chung Wu ; San-Liang Lee ; Yen-Ting Pan

Silicon antireflection is realized with short and aligned SiNWs by using simple wet etching techniques. The use of short SiNWs as the antireflective material is favored over tall SiNWs since it can provide sufficiently low surface reflection with faster process time but avoid the sub-bandgap absorption and more complicated procedures for applying to make devices like solar cells. A post tip-sharpening process by wet chemical etching is developed to realize tapered nano structure to further reduce the surface reflection. This technique is very promising for practical applications in wafer-scale solar cell manufacturing.

Published in:

Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE

Date of Conference:

19-24 June 2011