By Topic

Evaluation of band gap narrowing of a tensile-strained Ge on InxGa1−xAs and its transfer onto glass substrate for solar cell applications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Hoshina, Y. ; Dept. of Phys. Electron., Tokyo Inst. of Technol., Tokyo, Japan ; Shimizu, M. ; Tadokoro, K. ; Yamada, A.

Photoluminescence measurement of a tensile-strained (TS) Ge thin film grown on InxGa1-xAs by molecular beam epitaxy has been carried out to verify the strain-induced band gap narrowing (SIBGN) of Ge, which is one of the most important properties of TS Ge for its solar cell application. The SIBGN of both the direct and indirect gaps of 0.56 % TS Ge have been observed, which well correspond to the theoretical prediction. After that, a “stressor-free” TS Ge/ ZnO/ glass substrate structure is demonstrated as a first step for the fabrication of TS Ge thin film solar cells. TS Ge films can maintain its initial tensile strain after eliminating InxGa1-xAs stressor layer due to the strain keeping ability of the ZnO layer. These achievements constitute significant steps toward the application of TS Ge to high-efficiency MJ solar cells.

Published in:

Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE

Date of Conference:

19-24 June 2011