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Characterization of hydrogenated amorphous silicon thin-film solar cell defects using optical beam induced current imaging and focused ion beam cross-sectioning technique

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8 Author(s)
L. Meng ; Centre for Integrated Circuit Failure Analysis and Reliability (CICFAR), Department of Electrical and Computer Engineering, National University of Singapore, Singapore ; S. Steen ; C. K. Koo ; C. S. Bhatia
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Defects in hydrogenated amorphous silicon (a-Si:H) thin-film solar cells were localized by optical beam induced current (OBIC) imaging and then characterized using focused ion beam (FIB) cross-sectioning technique. It was found that nano-voids in the active silicon layer and transparent conductive oxide underneath the back electrode were the main causes of OBIC signal reduction.

Published in:

Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE

Date of Conference:

19-24 June 2011