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27.6% Conversion efficiency, a new record for single-junction solar cells under 1 sun illumination

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7 Author(s)
Kayes, B.M. ; Alta Devices, Inc., Santa Clara, CA, USA ; Hui Nie ; Twist, R. ; Spruytte, S.G.
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Alta Devices, Inc. has fabricated a thin-film GaAs device on a flexible substrate with an independently-confirmed solar energy conversion efficiency of 27.6%, under AM1.5G solar illumination at 1 sun intensity. This represents a new record for single-junction devices under non-concentrated sunlight. This surpasses the previous record, for conversion efficiency of a single-junction device under non-concentrated light, by more than 1%. This is due largely to the high open-circuit voltage (Voc) of this device. The high Voc results from precise control of the dark current. The fact that this record result has been achieved with a thin-film shows that, for GaAs material systems, the majority of the growth substrate is not needed for device performance. This allows one to consider amortizing the potentially high cost of a GaAs growth substrate by growing a thin-film, lifting it off, and reusing the same substrate multiple times. This technology therefore has the potential to be a novel high-performance, thin-film option for terrestrial photovoltaics.

Published in:

Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE

Date of Conference:

19-24 June 2011

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