By Topic

Evidence for giant piezoresistance effect in n-type silicon nanowire field-effect transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Kang, Ting-Kuo ; Department of Electronic Engineering, Cheng Shiu University, No. 840, Chengching Rd., Niaosong Dist., Kaohsiung City 83347, Taiwan

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Experimental evidence for the giant piezoresistance (PZR) effect in n-type silicon nanowires (SiNWs) on silicon-on-insulator wafers, also called SiNW field-effect transistors (SiNWFETs), is demonstrated. While an external mechanical strain is applied to SiNWFETs depleted by a back-gate bias, a marked increase in the subthreshold drain current is found, thus supporting the widely reported giant piezoresistance effect. This increase can be attributed to the change in Si/SiO2 interface states, further suggesting interface trap-induced giant piezoresistance. Furthermore, through repeated cycles of tensile and released strain, the electromechanical response of the subthreshold drain current with time offers a potential for creating strain-gated SiNWFETs.

Published in:

Applied Physics Letters  (Volume:100 ,  Issue: 16 )