Referenced Items are not available for this document.
In this letter, we present a 15-nm-diameter InAs nanowire MOSFET with excellent on and off characteristics. An n-i-n doping profile was used to reduce the source and drain resistances, and an Al2O3/HfO2 bilayer was introduced in the high- process. The nanowires exhibit high drive currents, up to 1.25 A/mm, normalized to the nanowire circumference, and current densities up to 34 MA/cm2(VD = 0.5 V) . For a nominal LG = 100 nm, we observe an extrinsic transconductance (g_m) of 1.23 S/mm and a subthreshold swing of 93 mV/decade at VD = 10 mV .
Published in:
Electron Device Letters, IEEE
(Volume:33
,
Issue:
6
)
Date of Publication: June 2012
- Page(s):
- 791 - 793
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 12850769
- Digital Object Identifier :
- 10.1109/LED.2012.2190132
- Product Type:
- Journals & Magazines
- Date of Publication :
- 17 April 2012
- Date of Current Version :
- 21 May 2012
- Issue Date :
- June 2012
- Sponsored by :
- IEEE Electron Devices Society
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