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In this letter, we present a 15-nm-diameter InAs nanowire MOSFET with excellent on and off characteristics. An n-i-n doping profile was used to reduce the source and drain resistances, and an Al2O3/HfO2 bilayer was introduced in the high- process. The nanowires exhibit high drive currents, up to 1.25 A/mm, normalized to the nanowire circumference, and current densities up to 34 MA/cm2(VD = 0.5 V) . For a nominal LG = 100 nm, we observe an extrinsic transconductance (g_m) of 1.23 S/mm and a subthreshold swing of 93 mV/decade at VD = 10 mV .
Date of Publication: June 2012