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120 GHz phased-array circuits in 0.25 µm SiGe BiCMOS technology

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4 Author(s)
Elkhouly, M. ; IHP, Frankfurt, Germany ; Glisic, S. ; Ellinger, F. ; Scheytt, J.C.

This paper describes the design of D-band phased-array circuits in 0.25 μm technology. The first part describes the design of the passive components which are used in the phased-array systems such as balun, Wilkinson divider and branch-line coupler. A millimeter-wave vector-modulator is designed to support both amplitude and phase control for beam-forming applications. In the second part the designed circuits are integrated together to form a two channel 110-130 GHz phased-array chip. Each channel exhibits 360° phase control with 15 dB of amplitude control range and gain of -10 dB. The entire chip draws 45 mA from 3.3 V supply. The millimeter-wave phase shifting and the low-power consumption makes it ideal for highly integrated scalable beam-forming systems for both imaging and communication.

Published in:

Microwave Conference (GeMiC), 2012 The 7th German

Date of Conference:

12-14 March 2012

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