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Electroabsorption waveguide modulators at 1.3 μm fabricated on GaAs substrates

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4 Author(s)
Loi, K.K. ; Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA ; Shen, L. ; Wieder, H.H. ; Chang, W.S.C.

An InGaAs-InAlAs multiple-quantum-well (MQW) electroabsorption (EA) waveguide modulator fabricated on a GaAs substrate has been designed and characterized at 1.3-/spl mu/m wavelength for microwave signal transmission on an analog fibre-optic link. The modulator structure with a lattice constant 2.5% larger than that of GaAs is grown upon a 0.7-/spl mu/m-thick three-stage compositionally step-graded In/sub z/Al/sub 1-z/As relaxed buffer. The waveguide modulator exhibits a high-electrooptic slope efficiency of 0.56 V/sup -1/, a 3-dB electrical bandwidth of 20 GHz, and a large optical saturation intensity in excess of 17 mW. These high-speed optoelectronic modulators could potentially be integrated with on-chip GaAs electronic driver circuits.

Published in:

Photonics Technology Letters, IEEE  (Volume:9 ,  Issue: 9 )

Date of Publication:

Sept. 1997

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