By Topic

Electroabsorption waveguide modulators at 1.3 μm fabricated on GaAs substrates

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
K. K. Loi ; Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA ; L. Shen ; H. H. Wieder ; W. S. C. Chang

An InGaAs-InAlAs multiple-quantum-well (MQW) electroabsorption (EA) waveguide modulator fabricated on a GaAs substrate has been designed and characterized at 1.3-μm wavelength for microwave signal transmission on an analog fibre-optic link. The modulator structure with a lattice constant 2.5% larger than that of GaAs is grown upon a 0.7-μm-thick three-stage compositionally step-graded In/sub z/Al/sub 1-z/As relaxed buffer. The waveguide modulator exhibits a high-electrooptic slope efficiency of 0.56 V/sup -1/, a 3-dB electrical bandwidth of 20 GHz, and a large optical saturation intensity in excess of 17 mW. These high-speed optoelectronic modulators could potentially be integrated with on-chip GaAs electronic driver circuits.

Published in:

IEEE Photonics Technology Letters  (Volume:9 ,  Issue: 9 )