Scheduled System Maintenance:
On Wednesday, July 29th, IEEE Xplore will undergo scheduled maintenance from 7:00-9:00 AM ET (11:00-13:00 UTC). During this time there may be intermittent impact on performance. We apologize for any inconvenience.
By Topic

Improvements in mode-locked semiconductor diode lasers using monolithically integrated passive waveguides made by quantum-well intermixing

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Camacho, F. ; Dept. of Electron. & Electr. Eng., Glasgow Univ., UK ; Avrutin, E.A. ; Cusumano, P. ; Saher Helmy, A.
more authors

By using the technique of quantum-well intermixing (QWI), monolithically integrated passive, and active waveguides can be fabricated. It is shown that mode-locked extended cavity semiconductor lasers with integrated low-loss passive waveguides display superior performance to devices in which the entire waveguide is active: the threshold current is a factor of 3-5 lower, the pulsewidth is reduced from 10.2 ps in the all active laser to 3.5 ps in the extended cavity device and there is a decrease in the free-running jitter level from 15 to 6 ps (10 kHz-10 MHz).

Published in:

Photonics Technology Letters, IEEE  (Volume:9 ,  Issue: 9 )