Embedded passive and active package using silicon substrate

In this paper, an embedded passive and active package is developed by using silicon substrates. Embedded passives are integrated on the silicon substrate or laminated organic using thin-film processes, and active devices are embedded in the silicon using cavity structures. Organic lamination processes are used for filling the gap between IC and silicon and also, it is possible to realize thick insulation layers. Due to thick laminated organics, it is possible to improve Q factors of spiral inductors. To demonstrate the process technology, two active ICs, a SPDT switch and LNA, are embedded in the silicon cavity depth of 160 μm and thin film MIM capacitors for DC blocking or impedance matching are integrated in the substrate. The size of implemented switch LNA module is 2.3 × 1.75 × 0.1 mm
³
. The measured insertion loss of the switch was 0.58 dB at 2.45 GHz and its application frequency is improved by 6 GHz due to low parasitic effect. The gain of the switch LNA module is 12 dB at the pass band.