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A Nested-Reactance Feedback Power Amplifier for Q -Band Applications

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2 Author(s)
Kalantari, N. ; Dept. of Electr. & Comput. Eng., Univ. of California-San Diego, La Jolla, CA, USA ; Buckwalter, J.F.

A power amplifier (PA) topology is presented that incorporates a feedback network around the transistor to satisfy matching requirements. Circuit parameters can be tuned for small- and large-signal circuit operation. The PA is fabricated in a 120-nm SiGe BiCMOS process and performs from 36 to 41 GHz. The PA achieves a saturated output power of 23 dBm and a peak power-added efficiency of 20% at 38 GHz. This is the highest reported output power from a single PA at Q -band in silicon.

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:60 ,  Issue: 6 )