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Browse Journals & Magazines > Microwave Theory and Techniqu ...> Volume:60 Issue:6 Help

A Nested-Reactance Feedback Power Amplifier for Q -Band Applications

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2 Author(s)
Kalantari, N. ; Dept. of Electr. & Comput. Eng., Univ. of California-San Diego, La Jolla, CA, USA ; Buckwalter, J.F.

A power amplifier (PA) topology is presented that incorporates a feedback network around the transistor to satisfy matching requirements. Circuit parameters can be tuned for small- and large-signal circuit operation. The PA is fabricated in a 120-nm SiGe BiCMOS process and performs from 36 to 41 GHz. The PA achieves a saturated output power of 23 dBm and a peak power-added efficiency of 20% at 38 GHz. This is the highest reported output power from a single PA at Q -band in silicon.

Published in:
Microwave Theory and Techniques, IEEE Transactions on  (Volume:60 ,  Issue: 6 )

Date of Publication: June 2012

Page(s):
1667 - 1675
ISSN :
0018-9480
INSPEC Accession Number:
12761198
Digital Object Identifier :
10.1109/TMTT.2012.2190751
Date of Publication :
16 April 2012
Date of Current Version :
25 May 2012
Issue Date :
June 2012
Sponsored by :
IEEE Microwave Theory and Techniques Society

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