By Topic

A Low-Phase-Noise Wide-Tuning-Range Oscillator Based on Resonant Mode Switching

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Guansheng Li ; Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA ; Li Liu ; Yiwu Tang ; Afshari, E.

In this paper we will present a low-phase-noise wide-tuning-range oscillator suitable for scaled CMOS processes. It switches between the two resonant modes of a high-order LC resonator that consists of two identical LC tanks coupled by capacitor and transformer. The mode switching method does not add lossy switches to the resonator and thus doubles frequency tuning range without degrading phase noise performance. Moreover, the coupled resonator leads to 3 dB lower phase noise than a single LC tank, which provides a way of achieving low phase noise in scaled CMOS process. Finally, the novel way of using inductive and capacitive coupling jointly decouples frequency separation and tank impedances of the two resonant modes, and makes it possible to achieve balanced performance. The proposed structure is verified by a prototype in a low power 65 nm CMOS process, which covers all cellular bands with a continuous tuning range of 2.5-5.6 GHz and meets all stringent phase noise specifications of cellular standards. It uses a 0.6 V power supply and achieves excellent phase noise figure-of-merit (FoM) of 192.5 dB at 3.7 GHz and >; 188 dB across the entire tuning range. This demonstrates the possibility of achieving low phase noise and wide tuning range at the same time in scaled CMOS processes.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:47 ,  Issue: 6 )
RFIC Virtual Journal, IEEE