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Hole mobilities of quantum-well p-MOSFETs on strained Si (sSi)/Si0.5Ge0.5/strained SOI (sSOI) and Si/Si0.5Ge0.5/SOI heterostructure substrates are investigated as a function of temperature. Ge interdiffusion during annealing in highly strained Si0.5Ge0.5 on SOI is reduced by the growth of Si0.5Ge0.5 layer on biaxially tensely strained SOI. As a result, the sSi/Si0.5Ge0.5/sSOI transistors showed significantly higher hole mobilities than the Si/Si0.5Ge0.5/SOI device at low temperatures.
Date of Publication: June 2012