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Browse Journals & Magazines > Applied Physics Letters ...> Volume:100 Issue:15 Help

Improved photoresponsivity of semiconducting BaSi2 epitaxial films grown on a tunnel junction for thin-film solar cells

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9 Author(s)
Weijie Du ; Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, Japan ; Suzuno, M. ; Ajmal Khan, M. ; Toh, K.
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The highest photoresponsivity and an internal quantum efficiency exceeding 70% at 1.55 eV were achieved for 400 nm thick undoped n-type BaSi2 epitaxial layers formed on a n+-BaSi2/p+-Si tunnel junction (TJ) on Si(111). The diffusion of Sb atoms was effectively suppressed by an intermediate polycrystalline Si layer grown by solid phase epitaxy, located between the TJ and undoped BaSi2 layers.

Published in:
Applied Physics Letters  (Volume:100 ,  Issue: 15 )

Date of Publication: Apr 2012

Page(s):
152114 - 152114-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.3703585
Product Type:
Journals & Magazines
Date of Current Version :
19 April 2012
Issue Date :
Apr 2012

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