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Modeling Transmission Lines on Silicon in the Frequency and Time Domains from S -Parameters

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3 Author(s)
Sejas-Garcia, S.C. ; Dept. of Electron., Inst. Nac. de Astrofis., Puebla, Mexico ; Torres-Torres, R. ; Murphy-Arteaga, R.S.

This brief presents the full characterization and modeling of uniform transmission lines on silicon. It includes the implementation of equivalent circuit models in both the frequency and time domains to perform accurate and causal simulations up to 30 GHz and for rise times in the order of picoseconds, respectively. These models can be directly implemented in SPICE-like simulators to obtain fast and physically based results when working on RFCMOS.

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Electron Devices, IEEE Transactions on  (Volume:59 ,  Issue: 6 )