By Topic

Modeling Transmission Lines on Silicon in the Frequency and Time Domains from S -Parameters

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Svetlana C. Sejas-Garcia ; Department of Electronics, Instituto Nacional de Astrofísica, Óptica y Electrónica, Puebla, Mexico ; Reydezel Torres-Torres ; Roberto S. Murphy-Arteaga

This brief presents the full characterization and modeling of uniform transmission lines on silicon. It includes the implementation of equivalent circuit models in both the frequency and time domains to perform accurate and causal simulations up to 30 GHz and for rise times in the order of picoseconds, respectively. These models can be directly implemented in SPICE-like simulators to obtain fast and physically based results when working on RFCMOS.

Published in:

IEEE Transactions on Electron Devices  (Volume:59 ,  Issue: 6 )