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On an Electroless Plating (EP)-Based Pd/AlGaN/GaN Heterostructure Field-Effect Transistor (HFET)-Type Hydrogen Gas Sensor

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8 Author(s)
Chien-Chang Huang ; Dept. of Electr. Eng., Nat. Cheng-Kung Univ., Tainan, Taiwan ; Huey-Ing Chen ; Tai-You Chen ; Chi-Shiang Hsu
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A Pd/AlGaN/GaN heterostructure field-effect transistor (HFET)-type hydrogen gas sensor, based on the sensitization, activation, and electroless plating (EP) deposition processes, is fabricated and studied. Due to the used sensitization and activation approaches, a dense and uniform EP seed layer could be achieved. Good dc and microwave characteristics, including the higher turn-on voltage, lower reverse leakage current, improved thermal stability of drain current, enhanced unity current gain cutoff frequency, and maximum oscillation frequency, are obtained for a 1-m-gate-length device. Moreover, the significant hydrogen gas sensing performance, such as larger drain current variation and higher hydrogen detection sensitivity, are found under 1% and 5 ppm H2/air ambiences, respectively. Consequently, the studied EP-based Pd/AlGaN/GaN HFET gives the promise for high-performance electronic device and hydrogen gas sensor applications.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 6 )