Cart (Loading....) | Create Account
Close category search window

Increased Light Extraction From Vertical GaN Light-Emitting Diodes With Ordered, Cone-Shaped Deep-Pillar Nanostructures

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
An, Ho-Myoung ; Sch. of Electr. Eng., Korea Univ., Seoul, South Korea ; Jae In Sim ; Ki Seob Shin ; Mo Sung, Yun
more authors

In this paper, improved light extraction using cone-shaped deep-pillar nanostructures is demonstrated on the Honeycomb-type vertical GaN light-emitting diodes (VLEDs). In order to produce ordered, cone-shaped deep-pillar patterns on the surface of an n-type GaN, double-layered polystyrene (PS) nanospheres of 500-nm size were coated onto the n-GaN layer by a simple spin-coating. Then, immediately after the O2 plasma ashing for double-layered PS beads, the Ni metal was deposited and lifted off to form a hard mask for deep pillar etching. Then, the three VLEDs-the reference VLED with no patterns and the two VLEDs with ordered, cone-shaped pillar patterns of 1.0 and 1.5 μm depth on the n-type GaN surface-were prepared for comparison. As a result, the output power for the proposed VLEDs with 1.0- and 1.5-μm-deep cone-shaped patterns has been increased by 200% and 214%, respectively, at 350 mA as compared to the reference VLED. There was a slight sacrifice of operational voltage and leakage current. The improved optical properties are attributed to the multiple scattering of light from the sidewall of the cone-shaped patterns and the increased surface dimension.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:48 ,  Issue: 7 )

Date of Publication:

July 2012

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.