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Experimental Investigation of Border Trap Generation in InGaAs nMOSFETs With \hbox {Al}_{2}\hbox {O}_{3} Gate Dielectric Under PBTI Stress

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6 Author(s)
Guangfan Jiao ; Dept. of Microelectron., Fudan Univ., Shanghai, China ; Chengjun Yao ; Yi Xuan ; Darning Huang
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The reliability performance of InxGa1-xAs n-type metal-oxide-semiconductor field-effect transistors with Al2O3 gate dielectric under positive-bias temperature instability stress is investigated systematically. A model of stress-induced border traps was proposed to interpret all charge pumping and I-V experimental results excellently. The stress-induced border traps include recoverable donor traps and permanent acceptor traps with respective energy densities ΔDSOXDonor(E) and ΔDSOXAcceptor(E) . The shapes of ΔDSOXDonor(E) and ΔDSOXAcceptor(E) have been extracted from experimental data. ΔDSOXAcceptor(E) mainly distributes in the conduction band of InGaAs with a tail extending to the mid-gap, whereas ΔDSOXDonor(E) has a large distribution inside the energy gap and extends to the conduction band. The high density of ΔDSOXDonor(E) in the energy gap induces large degradation in the off-current, which is particularly serious when the In composition x is raised to 0.65.

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Electron Devices, IEEE Transactions on  (Volume:59 ,  Issue: 6 )