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A Novel BJT Structure Implemented Using CMOS Processes for High-Performance Analog Circuit Applications

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9 Author(s)
Jung, Y.-J. ; Department of Electronics Engineering, Chungnam National University, Daejeon, Korea ; Park, B.-S. ; Kwon, H.-M. ; Kwon, S.-K.
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In this paper, a novel bipolar junction transistor (BJT) structure is proposed for high matching characteristics and its performance is compared with a conventional BJT structure. Although the proposed BJT matching structure indicates a decrease of collector current density J_{C} and current gain \beta of about 5.36% and 1.02% compared with those of the conventional BJT structure, the matching characteristics of the collector current (A_{\rm IC}) and the current gain (A_{\beta }) for the proposed structure are improved by about 31% and 24%. The improved matching characteristic of the proposed structure is believed to be due to the reduced effect of the deep n-well or the reduced current path from emitter to collector.

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Semiconductor Manufacturing, IEEE Transactions on  (Volume:25 ,  Issue: 4 )