Notification:
We are currently experiencing intermittent issues impacting performance. We apologize for the inconvenience.
By Topic

Reliability Assessment of Through-Silicon Vias in Multi-Die Stack Packages

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Xi Liu ; George W. Woodruff Sch. of Mech. Eng., Georgia Inst. of Technol., Atlanta, GA, USA ; Qiao Chen ; Sundaram, V. ; Simmons-Matthews, M.
more authors

A thermo-mechanical reliability study of through-silicon vias (TSVs) is presented in this paper. TSVs are used to interconnect stacked dies to achieve 3-D packages. As the core of the TSV contains high coefficient of thermal expansion (CTE) copper surrounded by low-CTE SiO2 and Si materials, the thermo-mechanical reliability of TSVs is a concern. When dies with such TSVs are stacked and packaged, the presence of additional structures and associated materials could introduce different thermo-mechanical concerns compared with free-standing wafers. This paper presents 3-D finite-element models for studying the thermo-mechanical stresses in TSVs in free-standing wafers and in stacked dies, which are packaged. Warpage measurements have been used to validate the finite-element modeling approach. The results from the finite-element models show that the TSV stresses in a packaging configuration are typically lower than the TSV stresses in a free-standing wafer configuration. In addition, it is seen that the microbumps connecting adjacent dies experience high magnitude of inelastic strain, indicating that such locations are of reliability concern.

Published in:

Device and Materials Reliability, IEEE Transactions on  (Volume:12 ,  Issue: 2 )