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Crystal Growth and Scintillation Properties of Ho-Doped Lu _{3} Al _{5} O _{12} Single Crystals

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8 Author(s)
Sugiyama, M. ; Inst. for Mater. Res., Tohoku Univ., Sendai, Japan ; Yanagida, T. ; Fujimoto, Y. ; Totsuka, D.
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The crystals of 0.1, 0.5, 1, and 3% Ho doped Lu3Al5O12 (Ho:LuAG) grown by the micro-pulling-down method were examined for their scintillation properties. At wavelengths longer than 300 nm, Ho:LuAG crystals demonstrated around 60% transparency with many absorption peaks attributed to Ho3+ 4f10-4 f10 transitions. When excited by 241Am α-ray to obtain radio luminescence spectra, broad host emission and four sharp Ho3+ 4f10-4 f10 emission peaks were detected in the visible region. Light yields and decay time profiles of the samples irradiated by 137Cs γ-ray were measured using photomultiplier tubes R7600 (Hamamatsu). Ho 0.5%:LuAG showed the highest light yield of 3100 ±310 photons/MeV among the present samples. The decay time profiles were well reproduced by two components exponential approximation consisting of 0.5-1 μs and 3-6 μs.

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Nuclear Science, IEEE Transactions on  (Volume:59 ,  Issue: 5 )