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Browse Journals & Magazines > Applied Physics Letters ...> Volume:100 Issue:14 Help

Few electron double quantum dot in an isotopically purified 28Si quantum well

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8 Author(s)
Wild, A. ; Walter Schottky Institut and Physics Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany ; Kierig, J. ; Sailer, J. ; Ager, J.W.
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We present a few electron double quantum dot device defined in an isotopically purified 28Si quantum well (QW). An electron mobility of 5.5·104cm2(Vs)-1 is observed in the QW, which is the highest mobility ever reported for a two-dimensional electron system in 28Si. The residual concentration of 29Si nuclei in the 28Si QW is lower than 103ppm, at the verge where the hyperfine interaction is theoretically no longer expected to dominantly limit the T2 spin dephasing time. We also demonstrate a complete suppression of hysteretic gate behavior and charge noise using a negatively biased global top gate.

Published in:
Applied Physics Letters  (Volume:100 ,  Issue: 14 )

Date of Publication: Apr 2012

Page(s):
143110 - 143110-4
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.3701588
Product Type:
Journals & Magazines
Date of Current Version :
12 April 2012
Issue Date :
Apr 2012

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