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Comparison of Charge Pumping and 1/f Noise in Irradiated Ge pMOSFETs

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9 Author(s)
Francis, S.A. ; Department of Energy, Air Force Institute of Technology, Wright-Patterson Air Force Base, OH, USA ; Cher Xuan Zhang ; Zhang, E.X. ; Fleetwood, D.M.
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Irradiated Ge pMOSFETs have been characterized via charge pumping $(I_{rm CP})$ and $1/f$ noise. The noise increases much more with irradiation than does $I_{rm CP}$ for devices with eight Si monolayers at the interface, while devices with five Si monolayers and lower halo implantation dose exhibit comparable increases in noise and $I_{rm CP}$ with irradiation. These results suggest that border traps in the ${rm HfO}_{2}$ affect the noise more than interface traps, and that devices with eight Si monolayers have a higher border-trap density than devices with five Si monolayers. Noise measurements as a function of gate voltage show that the border trap density increases significantly toward the Ge valence band edge, while three-level charge pumping reveals an interface trap density that increases slightly toward midgap.

Published in:

Nuclear Science, IEEE Transactions on  (Volume:59 ,  Issue: 4 )

Date of Publication:

Aug. 2012

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