By Topic

Comparison of Charge Pumping and 1/f Noise in Irradiated Ge pMOSFETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
Francis, S.A. ; Department of Energy, Air Force Institute of Technology, Wright-Patterson Air Force Base, OH, USA ; Cher Xuan Zhang ; Zhang, E.X. ; Fleetwood, D.M.
more authors

Irradiated Ge pMOSFETs have been characterized via charge pumping $(I_{rm CP})$ and $1/f$ noise. The noise increases much more with irradiation than does $I_{rm CP}$ for devices with eight Si monolayers at the interface, while devices with five Si monolayers and lower halo implantation dose exhibit comparable increases in noise and $I_{rm CP}$ with irradiation. These results suggest that border traps in the ${rm HfO}_{2}$ affect the noise more than interface traps, and that devices with eight Si monolayers have a higher border-trap density than devices with five Si monolayers. Noise measurements as a function of gate voltage show that the border trap density increases significantly toward the Ge valence band edge, while three-level charge pumping reveals an interface trap density that increases slightly toward midgap.

Published in:

Nuclear Science, IEEE Transactions on  (Volume:59 ,  Issue: 4 )