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Deep UV {\rm Ta}_{2}{\rm O}_{5} /Zinc-Indium-Tin-Oxide Thin Film Photo-Transistor

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6 Author(s)
C. J. Chiu ; Institute of Microelectronics and Department of Electrical Engineering, Advanced Optoelectronic Technology Center, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan, Taiwan ; S. S. Shih ; Wen-Yin Weng ; Shoou-Jinn Chang
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The authors report the fabrication of a deep-ultraviolet sensitive a-ZITO thin-film-transistor (TFT) with a Ta2O5 gate dielectric. It is found that carrier mobility, threshold voltage, and sub-threshold swing are 106.2 cm2/Vs, 0.75 V, and 0.45 V/decade, respectively, measured in the dark. It is also found that measured current increased from 2.3 × 10-9 A to 7.97 × 10-5 A, as we illuminated the sample with λ = 250-nm UV light when VG is biased at 0 V. Furthermore, it is found that deep-UV-to-visible rejection ratio could reach 2.3 × 105 for the fabricated Ta2O5/a-ZITO TFT.

Published in:

IEEE Photonics Technology Letters  (Volume:24 ,  Issue: 12 )