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Micromagnetic simulations of magnetoresistive behavior of sub-micrometer spin-valve MRAM devices

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2 Author(s)
Oti, J.O. ; Div. of Electromagn. Technol., Nat. Inst. of Stand. & Technol., Boulder, CO, USA ; Russek, Stephen E.

The effects of device shape and size on the giant magnetoresistive (MR) response of NiFe7.5 nm/Co0.6 nm/Cu3 nm /Co0.6 nm/NiFe7.5 nm/FeMn spin-valve magnetoresistive random access memory (MRAM) stripes are studied by micromagnetic simulation. Samples having aspect ratios of 10:1, 3:1 and 1.5:1, and line widths varying from 0.5 μm to 1.5 μm are simulated. The effects of the magnetostatic coupling between the magnetic layers and their self-demagnetization are studied

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Magnetics, IEEE Transactions on  (Volume:33 ,  Issue: 5 )