By Topic

Review and Critique of Analytic Models of MOSFET Short-Channel Effects in Subthreshold

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Qian Xie ; Tsinghua Nat. Lab. for Inf. Sci. & Technol., Tsinghua Univ., Beijing, China ; Jun Xu ; Yuan Taur

This paper surveys, reviews, and critiques analytic models of MOSFET short-channel effects (SCEs) in subthreshold published over the past four decades. In the first half of this paper, the published models on SCEs are categorized into the following four main groups based on their approach: 1) charging sharing models; 2) empirical expressions; 3) polynomial potential models; and 4) analytic solutions to 2-D Poisson's equation. The strength and weakness of each approach are elaborated in terms of its physical soundness and predictive ability. A key development was the exponential dependence of SCE on channel length (L) , SCE ~ exp(-L/l0), leading to the introduction of scale length (l0). In the second half of this paper, the predictions of each analytic SCE model are examined by generic 2-D numerical simulations. In particular, the merit of each model is judged by its prediction on the scale length (l0) as a function of the thickness and dielectric constant (κ) of the gate insulator. Only one model, i.e., the generalized scale length model that treated the silicon and insulator regions as two distinct dielectric regions with shared boundary conditions, correctly predicted the MOSFET scale length under all dielectric constant and thickness conditions. A variation of the generalized scale length model applies to recent multiple-gate MOSFETs near the limit of scaling.

Published in:

Electron Devices, IEEE Transactions on  (Volume:59 ,  Issue: 6 )