By Topic

Analysis of GaN HEMT Failure Mechanisms During DC and Large-Signal RF Operation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Chini, A. ; Dept. of Inf. Eng., Univ. of Modena & Reggio Emilia, Modena, Italy ; Di Lecce, V. ; Fantini, F. ; Meneghesso, G.
more authors

An analysis of the reliability of GaN high-electron-mobility transistors during dc and RF stress tests is presented. Competing degradation mechanisms have been observed during RF operation, demonstrating the dependence of device reliability on device RF driving conditions. DC tests revealed only one degradation pattern related to defect formation at the high-electric-field region of the gate contact. RF signals, however, allow for other physical phenomena to take place before the said defect formation. Electron injection on the gate-drain region decreases the electric field value, thus counteracting the electric-field-induced defect formation at the gate edge.

Published in:

Electron Devices, IEEE Transactions on  (Volume:59 ,  Issue: 5 )