Referenced Items are not available for this document.
This letter presents a polycrystalline-silicon channel TaN-Al2O3-Si3N4-SiO2-silicon (TANOS) nonvolatile memory (NVM) with a charge-trapping layer of embedded Si nanocrystals (NCs) (Si-NCs). The fabrication process of the Si-NCs is simple and highly compatible with the current Flash process. NCs enhance the program/erase speed of the NVM devices because the interface between Si-NCs and nitride contains numerous trapping sites for storing electrons. Moreover, the Si-NCs locally concentrate the electric field and reduce the effective nitride thickness. The NC TANOS exhibits a charge loss of only 5% for ten years of data storage.
Published in:
Electron Device Letters, IEEE
(Volume:33
,
Issue:
5
)
Date of Publication: May 2012
- Page(s):
- 649 - 651
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 12692193
- Digital Object Identifier :
- 10.1109/LED.2012.2188826
- Product Type:
- Journals & Magazines
- Date of Publication :
- 04 April 2012
- Date of Current Version :
- 20 April 2012
- Issue Date :
- May 2012
- Sponsored by :
- IEEE Electron Devices Society
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