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Polycrystalline-Si TFT TANOS Flash Memory Cell With Si Nanocrystals for High Program/Erase Speed and Good Retention

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4 Author(s)
Min-Feng Hung ; Dept. of Eng. & Syst. Sci., Nat. Tsing Hua Univ., Hsinchu, Taiwan ; Yung-Chun Wu ; Shun-Cheng Tien ; Jiang-Hung Chen

This letter presents a polycrystalline-silicon channel TaN-Al2O3-Si3N4-SiO2-silicon (TANOS) nonvolatile memory (NVM) with a charge-trapping layer of embedded Si nanocrystals (NCs) (Si-NCs). The fabrication process of the Si-NCs is simple and highly compatible with the current Flash process. NCs enhance the program/erase speed of the NVM devices because the interface between Si-NCs and nitride contains numerous trapping sites for storing electrons. Moreover, the Si-NCs locally concentrate the electric field and reduce the effective nitride thickness. The NC TANOS exhibits a charge loss of only 5% for ten years of data storage.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 5 )

Date of Publication:

May 2012

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