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A Feedback Spin-Valve Memristive System

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4 Author(s)
Weiran Cai ; Fac. of Electr. & Inf. Eng., Tech. Univ. Dresden, Dresden, Germany ; Schmidt, Torsten ; Jorges, U. ; Ellinger, F.

We propose theoretically a generalized memristive system based on controlled spin polarizations in giant magnetoresistive material using a feedback loop with classical Hall Effect. The dynamics can exhibit a memristive pinched hysteretic loop while it possesses a self-crossing knot not located at the origin. Additionally, a single-looped orbit can also be observed in the system. We provide a sufficient condition for the stability based on an estimation of the Floquet exponent. The analysis shows that the non-origin-crossing dynamics is generally permitted in a class of passive memory systems that are not subject to Ohm's Law. We further develope the prevailing homogeneous definition to a broadened concept of generalized heterogeneous memristive systems, permitting the self-crossing knot not located at the origin, and ultimately to the concept of compound memory electronic systems.

Published in:

Circuits and Systems I: Regular Papers, IEEE Transactions on  (Volume:59 ,  Issue: 10 )

Date of Publication:

Oct. 2012

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