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Fast programming metal-gate Si quantum dot nonvolatile memory using green nanosecond laser spike annealing

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10 Author(s)
Yu-Chung Lien ; National Nano Device Laboratories, No. 26, Prosperity Road 1, Hsinchu 30078, Taiwan ; Jia-Min Shieh ; Wen-Hsien Huang ; Cheng-Hui Tu
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The ultrafast metal-gate silicon quantum-dot (Si-QD) nonvolatile memory (NVM) with program/erase speed of 1 μs under low operating voltages of ± 7 V is achieved by thin tunneling oxide, in situ Si-QD-embedded dielectrics, and metal gate. Selective source/drain activation by green nanosecond laser spike annealing, due to metal-gate as light-blocking layer, responds to low thermal damage on gate structures and, therefore, suppresses re-crystallization/deformation/diffusion of embedded Si-QDs. Accordingly, it greatly sustains efficient charge trapping/de-trapping in numerous deep charge-trapping sites in discrete Si-QDs. Such a gate nanostructure also ensures excellent endurance and retention in the microsecond-operation Si-QD NVM.

Published in:

Applied Physics Letters  (Volume:100 ,  Issue: 14 )