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Design, fabrication, and wafer level testing of (NiFe/Cu)xn dual stripe GMR sensors

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6 Author(s)

In this paper, a new head design, the dual stripe GMR (DS-GMR) is proposed. It consists of two self biased GMR sensors of thickness t, carrying opposite sense currents I, separated by an oxide layer with thickness g. Modeling of the head shows that outputs of 1 mV/μm trackwidth, with a D50 of 300 kfci and PW50≅0.1 μm can be achieved, which make it suitable for very high density operation. In order to test this DS-GMR sensor, (NiFe/Cu)xn GMR multilayers were developed with MR=12% and sensitivity of 0.25%/Oe. DS-GMR sensors were fabricated and tested at wafer level with bottom and top GMR of 4 to 5% for 5 μm trackwidths and a gap g=0.2 μm

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Magnetics, IEEE Transactions on  (Volume:33 ,  Issue: 5 )