Cart (Loading....) | Create Account
Close category search window
 

Design, fabrication, and wafer level testing of (NiFe/Cu)xn dual stripe GMR sensors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)

In this paper, a new head design, the dual stripe GMR (DS-GMR) is proposed. It consists of two self biased GMR sensors of thickness t, carrying opposite sense currents I, separated by an oxide layer with thickness g. Modeling of the head shows that outputs of 1 mV/μm trackwidth, with a D50 of 300 kfci and PW50≅0.1 μm can be achieved, which make it suitable for very high density operation. In order to test this DS-GMR sensor, (NiFe/Cu)xn GMR multilayers were developed with MR=12% and sensitivity of 0.25%/Oe. DS-GMR sensors were fabricated and tested at wafer level with bottom and top GMR of 4 to 5% for 5 μm trackwidths and a gap g=0.2 μm

Published in:

Magnetics, IEEE Transactions on  (Volume:33 ,  Issue: 5 )

Date of Publication:

Sep 1997

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.