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N-type Si Schottky barrier diodes (SBDs) have been fabricated in AMI 0.5 m process. The I-V characteristics have been characterised from -50 to 120-C. The bias voltages for achieving the zero temperature coefficient (ZTC) point were observed to be around 0.6-V, which are much smaller than the voltages for metal-oxide-semiconductor field-effective transistors (MOSFETs) to obtain the same point. A physical model was extracted for the SBDs, demonstrating the low ZTC-point-bias-voltages which are advantageous for low-voltage applications.