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Charge-Carrier Velocity Distributions in High-Mobility Polymer Dual-Gate Thin-Film Transistors

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3 Author(s)
Tae-Jun Ha ; Univ. of Texas at Austin, Austin, TX, USA ; Sonar, Prashant ; Dodabalapur, Ananth

We report charge-carrier velocity distributions in high-mobility polymer thin-film transistors (PTFTs) employing a dual-gate configuration. Our time-domain measurements of dual-gate PTFTs indicate higher effective mobility as well as fewer low-velocity carriers than in single-gate operation. Such nonquasi-static (NQS) measurements support and clarify the previously reported results of improved device performance in dual-gate devices by various groups. We believe that this letter demonstrates the utility of NQS measurements in studying charge-carrier transport in dual-gate thin-film transistors.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 6 )