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Self-Selective Characteristics of Nanoscale  \hbox {VO}_{x} Devices for High-Density ReRAM Applications

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12 Author(s)
Myungwoo Son ; Dept. of Nanobio Mater. & Electron., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea ; Xinjun Liu ; Sadaf, S.M. ; Daeseok Lee
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We herein present a hybrid-type memory device in which threshold switching and bipolar resistive switching are combined. The nanoscale vanadium oxide (VOx) device simultaneously exhibited self-selective performance and memory switching by electroforming. By using W instead of Pt for the top electrode, memory performance was improved in terms of cycling, pulse endurance, and retention properties attributed to a self-formed WOx/VOx interface. Such a phenomenon in a simple metal-oxide-metal structure provides a good potential for future high-density cross-point memory devices by avoiding the sneak-path problem.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 5 )

Date of Publication:

May 2012

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