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A 1V 19.3dBm 79GHz power amplifier in 65nm CMOS

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3 Author(s)
Kun-Yin Wang ; Nat. Taiwan Univ., Taipei, Taiwan ; Tao-Yao Chang ; Chorng-Kuang Wang

For a highly integrated wireless system including on-chip antennas, high-output- power power amplifiers (PA) are required to cover the desired transmission range. In order to achieve the output power level, power-combining techniques have gained more attention in recent years [1-5]. An efficient power-combining solution is essential since less DC power is needed for the same level of output power, and the difficulties of thermo-dissipation are thus relieved in a high-out- put-power PA. Transformer-based power combining is one of the common tech- niques, which can increase impedance-transformation ratio by increasing the number of input ports and results in a compact layout and reasonable loss [1-3, 5].

Published in:

Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2012 IEEE International

Date of Conference:

19-23 Feb. 2012