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A 3D system prototype of an eDRAM cache stacked over processor-like logic using through-silicon vias

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4 Author(s)
Matt Wordeman ; IBM T. J. Watson, Yorktown Heights, NY ; Joel Silberman ; Gary Maier ; Michael Scheuermann

3D integration (3DI) holds promise for improved performance of integrated systems by increasing interconnect bandwidth [1]. A processor stacked with cache memory is one potential application of 3DI [2]. This work describes the design and operation of a prototype of a 3D system, constructed by stacking a memory layer, built with eDRAM [3] and logic blocks from the IBM Power7™ processor L3 cache, and a “processor proxy” layer in 45nm CMOS technology [4] enhanced to include through-silicon vias (TSVs) [5]. Unlike the previously reported 3D eDRAM [6], the 3D stack described here is constructed using 50μm pitch μC4's joining the front side of one thick chip to TSV connections on the back side of a thinned chip. TSVs are formed of Cu-filled vias that are ~20μm in diameter and <;100μm deep [5].

Published in:

2012 IEEE International Solid-State Circuits Conference

Date of Conference:

19-23 Feb. 2012