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A 1.2V 38nm 2.4Gb/s/pin 2Gb DDR4 SDRAM with bank group and ×4 half-page architecture

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22 Author(s)
Kibong Koo ; Hynix Semiconductor, Icheon, Korea ; Sunghwa Ok ; Yonggu Kang ; Seungbong Kim
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DDR4 SDRAM is expected to realize low power consumption and high bandwidth using a 1.2V nominal supply voltage and to be a cost-effective solution for various applications. In this paper, bank group architecture, internal reference voltage level (IVREF) and pre-emphasis to overcome conventional operating frequency range are presented. CS_n to command/address latency (CAL), data bus inversion (DBI) and ×4 half-page architecture are introduced to reduce current consumption. Cyclic redundancy check (CRC) and command and address (CA) parity are adopted to check transmission errors in high bandwidth. Also, read CRC with DBI is calculated in parallel to mitigate calculation time and area penalty. Consequently, our 2Gb DDR4 SDRAM achieves 2.4Gb/s data rate at 1.0V supply voltage.

Published in:

2012 IEEE International Solid-State Circuits Conference

Date of Conference:

19-23 Feb. 2012