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Advance of the fabrication technology has enhanced the size and density for the NAND Flash memory but also brought new types of defects which need to be tested for the quality consideration. This work analyzes three types of physical defects for the deep nano-meter NAND Flash memory based on the circuit level simulation and proposes new categories of interference faults (IFs). Testing algorithm is also proposed to test the faults under the worst case condition. The algorithm, in addition to test IFs, can also detect the conventional address faults, disturbance faults and other RAM-like faults for the NAND Flash.