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12-W X -Band MMIC HPA and Driver Amplifiers in InGaP-GaAs HBT Technology for Space SAR T/R Modules

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3 Author(s)
Florian, C. ; Dept. of Electron., Comput. Sci. & Syst. (DEIS), Univ. of Bologna, Bologna, Italy ; Paganelli, R.P. ; Lonac, J.A.

The chip-set for the transmitting power lineup of satellite SAR antenna T/R modules has been designed and implemented exploiting a 2- μm GaInP-GaAs heterojunction bipolar transistor (HBT) technology suitable for space applications. The HBT technology features an integrated emitter ballast resistor that enables high-power density operation without suffering thermal runaway phenomena. Two monolithic microwave integrated circuit (MMIC) driver amplifiers and a MMIC HPA are described: the drivers exhibit small-signal gains exceeding 21 dB and P1 dB output power of about 28 and 29 dBm, respectively, in a 2-GHz bandwidth and CW condition. The HPA delivers more than 40-dBm power at about 2.5-dB gain compression and power-added efficiency (PAE) exceeding 36% in a 700-MHz bandwidth in pulsed operation. Its peak performance at the center of the band are 40.9-dBm output power and 45% PAE. These performance are obtained within tight de-rating conditions for space applications.

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:60 ,  Issue: 6 )