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Modeling, Simulation, and Validation of a Power SiC BJT

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6 Author(s)
Gachovska, T. ; Dept. of Electr. Eng., Univ. of Nebraska-Lincoln, Lincoln, NE, USA ; Hudgins, J.L. ; Bryant, A. ; Santi, E.
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This paper presents a physics-based model of a silicon carbide bipolar junction transistor and verification of its validity through experimental testing. The Fourier series solution is used to solve the ambipolar diffusion equation in the transistor collector region. The model is realized using MATLAB and Simulink. The experimental results of static operation and also the simulated and experimental results of switching waveforms are given.

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Power Electronics, IEEE Transactions on  (Volume:27 ,  Issue: 10 )