By Topic

A physical approach to the current and charge relations in SiGe-base HBT modeling for circuit simulation and device design

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
G. F. Niu ; Inst. of Microelectron., Fudan Univ., Shanghai, China ; G. Ruan ; T. A. Tang

The current and charge relations for SiGe-base heterojunction bipolar transistor (HBT) are derived from the differential equations for carriers in the base. A universal description for all injection levels is obtained, which is suitable for circuit simulation. Based on these relations, the invalidity of the concept of effective doping used previously in high injection is identified and explained physically. The base profile design for applications at both room and liquid nitrogen temperature is also discussed

Published in:

Bipolar/BiCOMS Circuits and Technology Meeting, 1993., Proceedings of the 1993

Date of Conference:

4-5 Oct 1993