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Study on surface modification of silicon using CHF3/O2 plasma for nano-imprint lithography

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9 Author(s)
Kim, Youngkeun ; Department of Control and Instrumentation Engineering, Korea University, Jochiwon, Chungnam 339-700, Korea ; Kang, Sungchil ; Ham, Youn-Hyun ; Kwon, Kwang-Ho
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In this article, we report the surface modification of silicon by an inductively coupled CHF3/O2 plasma treatment for demolding process in nano-imprint lithography. The effects of O2 addition to the CHF3 plasma on the surface polymer were investigated. The Si surface energy remained nearly constant at O2 gas fraction from 0% to 50%, but it increased up to ∼60 mN/m at O2 gas fraction of 60%. In order to examine the relationship between the plasma and surface energy of Si, we attempted to conduct a model-based analysis of the CHF3/O2 plasma. Plasma diagnostics were performed by using a double Langmuir probe. At the same time, the surface analysis of Si was carried out by contact angle measurements and x-ray photoelectron spectroscopy.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:30 ,  Issue: 3 )

Date of Publication:

May 2012

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