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Thermal impedance modeling of GaAs multi-finger HBTs from low frequency s-parameter measurements

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4 Author(s)
Sevimli, O. ; Electron. Eng., Macquarie Univ., Sydney, NSW, Australia ; Parker, A.E. ; Fattorini, A.P. ; Harvey, J.T.

Self heating in GaAs based heterojunction bipolar transistors affect the microwave performance and needs to be taken into account in circuit design. It can be modeled by the addition of a thermal impedance to a compact nonlinear transistor model. We developed thermal impedance parameters that can be scaled for multi-finger devices, using the measured low frequency s-parameters of 1, 2, 4, and 6-finger transistors. The model gave very good fit to the measurements at all bias points.

Published in:

Microwave Conference Proceedings (APMC), 2011 Asia-Pacific

Date of Conference:

5-8 Dec. 2011

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