By Topic

A 90 nm CMOS wideband low noise amplifier using bandwidth extension technique

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Yueh-Hua Yu ; Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan ; Jau-Horng Chen ; Yi-Jan Emery Chen

A compact 90 nm CMOS wideband low noise amplifier (LNA) adopting bandwidth extension techniques is presented. The low noise characteristic of the LNA is achieved by the noise canceling technique and its gain flatness and bandwidth is enhanced by the gate inductive-peaking technique. The peaking inductor is realized by an active inductor for compact size and stability control. Without using any passive inductor, the size of the LNA core circuit is only 100 μm × 150 μm. From measurement results, the CMOS wideband LNA achieves a flat power gain of 12 dB with maximum variation of 0.5 dB from 100 MHz to 3600 MHz. The measured noise figure is 2.3 dB. Operated at 1.2 V, the CMOS LNA consumes 13 mW of power.

Published in:

Asia-Pacific Microwave Conference 2011

Date of Conference:

5-8 Dec. 2011