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Design of UWB low power low noise amplifier with body bias technique

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2 Author(s)
Meng-Ting Hsu ; Dept. & Inst. of Electron. Eng., Nat. Yunlin Univ. of Sci. & Technol., Yunlin, Taiwan ; Kun-Long Wu

In this paper, a low power circuit with body bias technique of UWB LNA which is implemented in a standard TSMC 0.18μm CMOS process was presented. The power reduction can be achieved by the body bias technique. From the measured results, the S11 is lower than -12dB, S22 is lower than -10dB and forward gain S21 is an average value with 12dB. The noise figure is from 4 to 5.7dB within the whole band. The power dissipation of the whole proposed LNA is 4.6mW.

Published in:

Microwave Conference Proceedings (APMC), 2011 Asia-Pacific

Date of Conference:

5-8 Dec. 2011