Design of UWB low power low noise amplifier with body bias technique

In this paper, a low power circuit with body bias technique of UWB LNA which is implemented in a standard TSMC 0.18μm CMOS process was presented. The power reduction can be achieved by the body bias technique. From the measured results, the S11 is lower than -12dB, S22 is lower than -10dB and forward gain S21 is an average value with 12dB. The noise figure is from 4 to 5.7dB within the whole band. The power dissipation of the whole proposed LNA is 4.6mW.