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The paper presents a RF/analog co-design methodology of designing a CMOS millimeter-wave (mm-wave) low-noise amplifier (LNA) with temperature-compensation biasing scheme. A 60-GHz LNA is designed and fabricated in a standard 90-nm bulk CMOS process. A switchable temperature-compensation bias circuitry, which allows the LNA to be tested by biased with the temperature-compensated biasing circuitry or with external voltage supply, is integrated in the LNA chip. This experiment proves that the proposed biasing scheme can significantly reduce the gain variation under different operating temperatures.
Date of Conference: 5-8 Dec. 2011