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Gain-Enhanced Monolithic Charge Pump With Simultaneous Dynamic Gate and Substrate Control

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2 Author(s)
Xiwen Zhang ; Dept. of Electr. Eng., Univ. of Texas at Dallas, Richardson, TX, USA ; Hoi Lee

This brief presents a gain-enhanced complimentary metal-oxide-semiconductor (CMOS) charge pump (CP) circuit via dynamically controlling the gate and substrate terminals of each pMOS pass transistor. The proposed control strategy enables the CP circuit free of the threshold-voltage drops, the body effect, and the floating substrate terminals of pass devices. The on-resistance of each pass device is also reduced to improve the gain and the power efficiency of the CP circuit. Implemented in a 0.35-μm single n-well CMOS process, the proposed four-stage monolithic CP circuit can operate with a supply voltage down to 0.9 V and deliver a maximum output current of about 100 μA. The proposed CP circuit also achieves a high voltage gain of 4 with two complementary-phase nonoverlapping clock signals.

Published in:

Very Large Scale Integration (VLSI) Systems, IEEE Transactions on  (Volume:21 ,  Issue: 3 )